U2532B Datasheet, PDF (8/10 Pages) TEMIC Semiconductors – IR Transmitter and Receiver

U2532B
Application Circuit
The diagram below shows the typical application for the
IC U2532B. The detector diode and IR emitter can also
be obtained from TEMIC. As emitter a high speed in-
frared emitting diode like TSHF5400 is recommended.
For improving output power two diodes can be connected
in series. An external current limiting resistor is used to
W ^{adjust the appropriate forward current. The resulting cur-}
rent of the emitter, with the settings RL = 5 and
V_CC = 5 V, is Id = 300 mA and the corresponding typical
radiant intensity of a single diode is IE = 120 mW/sr.
The IR radiation detector BPV22NF is a high speed and
high sensitive PIN photodiode in a plastic package with
a spherical side view lens. Because of a large radiant sen-
sitive area of A = 7.5 mm² a typical output current of
m l Ira = 85 A with Ee = 1 mW/cm² and = 870 nm is
achieved. A transmitting distance of approximately 3.5 m
is possible. Rs and C are the low pass filter network to sup-
press power supply noise and other disturbances. At
pin RxD the output signal can be received. Optionally an
W ^{external load resistor can be connected from pin 3 to VCC,}
if a smaller pull up resistor than 20 k is desired.
1
16
TxD
2
15
RxD
3
14
mC
Reset ₄
13
U2532B
5
12
SC
6
11
R_S
100 W
C
470 nF
V_CC
(5 V)
R_L
TSHF ^{5 W}
5400
7
10
8
9
BPV22NF
95 10212
Figure 8.
8 (10)
TELEFUNKEN Semiconductors
Preliminary Information
Rev. A1, 27-Sep-96