TDA4470-M Datasheet, PDF (7/16 Pages) TEMIC Semiconductors – Multistandard Video-IF and Quasi Parallel Sound Processing

TDA4470-M
Electrical Characteristics
V_S = +5 V, T_amb = +25°C; reference point Pin 4 (9, 16), unless otherwise specified
Parameters
DC-supply
Supply voltage – SDIP28
– SO28
Supply current
VIF-input
Input sensitivity, (RMS value)
Input impedance
Input capacitance
VIF-AGC
IF gain control range
AGC capacitor
Black level capacitor
Switching voltage: VCR mode
Switching current: VCR mode
Tuner-AGC
Available tuner-AGC current
Allowable output voltage
IF slip – tuner AGC
IF input signal for minimum
take over point
IF input signal for maximum
take over point
Variation of the take over point
by temperature
FPLL and VCO
Max. oscillator frequency
Vision carrier capture range
Oscillator drift (free running) as
function of temperature
Video output
Output current – source
– sink
Output resistance
Video output signal
Difference of the video signals
Sync. level
Zero carrier level for neg.
modulation, ultra white level
Zero carrier level for pos.
modulation, ultra black level
Supply voltage influence on the
ultra white and ultra black level
Video bandwidth (–3 dB)
Test Conditions / Pins Symbol Min. Typ.
Pin 23
V_S
4.5
5.0
V_S
4.5
5.0
I_S
85
Pin 6-7
For FPLL locked
v_in
80
See note 1
R_in
1.2
See note 1
C_in
2
Pins 8 and 15
See note 2
See note 2
G_v
60
65
Pin 8 C_AGC
2.2
Pin 15 C_BL
100
V_sw
4.0
I_sw
50
Pins 10 and 11 see note 3
I_tun
1
2
V₁₁
0.3
W ^{Current Itun: 10 to 90%}
R_top = 10 k (V_top = 4.5 V)
∆G_IF
v_in
8
R_top = 0, (V_top = 0.8 V)
v_in
40
∆T_amb = 55°C
∆v_in
VIF-AGC: G_v = 46 dB
Pins 18, 20, 21 and 26
2
see note 4
For carrier generation
f_vco = 38.9 MHz,
C_vco = 8.2 pF
See note 5,
∆Τ_amb = 55°C,
C_vco = 8.2 pF,
f_vco = 38.9 MHz
f_vco
70
∆f_cap
±1.5
±2
∆f/_∆T
Pin 12
±I₁₂
2
See note 1
Peak-to-peak value
Between B/G and L
V₁₃ = V_S
V₈ = 3 V
V₁₃ = 0
V₈ = 3 V
R_out
v_o,_vid
1.8
2.0
∆v_o,vid
V_sync
1.2
V_DC
3.4
V_DC
1.15
∆V/_V
1
W R_L ≥ 1 k , C_L ≤ 50 pF
B
6
8
Max. Unit
9.0
V
5.5
V
93
mA
120
mVk_RWMS
pF
dB
mF
nF
V
mA
4
mA
13.5
V
10
dB
4
mV
mV
3
dB
MHz
MHz
–0.3
%
5
mA
3
mA
100
W
2.2
Vpp
10
%
V
V
V
%/V
MHz
TELEFUNKEN Semiconductors
7 (16)
Rev. A2, 15-Oct-96
Preliminary Information