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U3500BM Datasheet, PDF (6/17 Pages) TEMIC Semiconductors – Cordless Telephone Signal Processor
U3500BM
Parameters
Test Conditions / Pins Symbol Min. Typ.
Earpiece amplifier BCOMP = 1, EEA = 1, VEXIN = 100 mVrms
Medium gain
GEA0 GEA1 GEA2 GEA3
000
0
GEA4 = 1
4
5
Minimum gain
GEA0 GEA1 GEA2 GEA3
000
0
GEA4 = 0
–12 –11
Gain change versus VS
Gain adjust range
VBatt = 3.1 to 5.2 V
–0.2
31
Gain adjust step
0.8
1
Output impedance
10
Distortion
Output offset voltage
Output voltage swing
dt
VEXIN = 0 mVrms
Increase VEXIN until distor-
tion (RECO1/ RECO2) is 5%
–200
4.8 5.0
Maximum gain
GEA0 GEA1 GEA2 GEA3
19
20
1
1
GEA4 = 1
11
Low Frequency Transmitter
GMIC EPREE
1
1
BSCR
1
GlTX
1000
G2TX
BCOMP
ETX
1000
1
1
Microphone Amplifier
Gain
VMIC = 10 mVrms, fIN = 1 kHz
High gain: GMIC = 1
Low gain: GMIC = 0
31
32
23
24
Gain change versus VS
VBatt = 3.1 to 5.2 V
Differential input impedance
–0.2 0
41
75
Output impedance
10
Distortion
VMIC = 10 mVrms
dt
Output noise
(psophmetrically weighted)
W VMIC = 0 Vrms high gain
(inputs closed across 200 )
TX Audio VCOIN = –20 dBVrms
Gain
GTX (COIN, TXO)
2.5 5.5
Change of gain TXO
EPREE = 0
–0.5 0
Gain between 3.2 and 5.2 V
–1
0
TX gain adjust range adj. 1
12
15
TX gain adjust step adj. 1
0.8
1
LIM gain adjust range adj. 2
15
LIM gain adjust range adj. 2
0.8
1
TX gain vs. frequency
(preemphasis bypassed)
relative to 1 kHz reference
100 Hz
300 Hz
1800 Hz
–1.3 –0.3
–1.3 –0.3
–0.8 0.2
level 0 dB
3200 Hz
–1.9 0.9
4100 Hz
–25.9 –23.9
Gain vs. frequency with
preemphasis relative to 1 kHz
reference level 0 dB
100 Hz
300 Hz
1800 Hz
3200 Hz
–0.8 –7.0
–6.8 –5.8
3.3
4.3
6.0
7.0
4100 Hz
16.6 –14.6
Total band ripple
VBatt = 3.1 to 5.2 V
VCOIN = –20 dBV
Max. Unit Fig.
6
dB
7
–10 dB
7
0.2 dB 7
dB 7
1.2 dB 7
30
W7
2
%7
200 mV 7
Vpp 7
21 dB
7
33
25
dB
dB
8
0.2 dB 8
103 kW 8
35
W8
1
%8
m 50
Vrmsp 8
8.5 dB 9
0.5 dB 9
+1 dB 9
18 dB 9
1.2 dB 9
dB 9
1.2 dB 9
0.7
0.7
1.2 dB 9
0.1
–21.9
–6.0
–4.8
5.3 dB 9
8.0
–12.6
2
dB 9
6 (17)
Rev. A3, 20-May-98
Preliminary Information