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U4037B Datasheet, PDF (4/6 Pages) TEMIC Semiconductors – LOW VOLTAGE SPEECH CIRCUIT WITH TONE RINGER INTERFACE | |||
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U4037B
Electrical Characteristics speech circuit
Reference point Pin GND, f = 1000 Hz, 0 dBm = 775 mVrms, RDC = 60 kâ¦, Tamb = 25°C, unless otherwise specified
Parameters
Line voltage
Transmit and sidetone
Input resistance
Gain
Line loss compensation
Distortion at line
Maximum output voltage
Anti-clipping attack time
Release time
Noise at line weighted
psophometrically
Sidetone reduction
DTMF-amplifier
y Volume range d 5%
Receiving amplifier
Gain
Amplification of DTMF signal
from DTMF IN to RECO1/2
Frequency response
Gain change with current
Gain deviation
Ear protection differential
Line loss compensation
Receiving noise at earphone
psophometrially weighted
Gain change when muted
Output voltage push pull
Supply voltage
Output voltage
Mute suppression
Test Conditions / Pin
IL = 8 mA
IL = 20 mA
IL = 30 mA
IL = 73 mA
Symbol Min
VL
1.8
3.0
3.6
7.7
Ri
Ri
30
W IL = 30 mA
RAGC = 0 , IL = 73 mA
Gs
47
DGs
â5
IL > 15 mA, VL = 775 mVrms ds
IL > 19
Vmic =
mA, d < 5 %,
10 mV, RDC =
100
kW
V1max
1.8
Vmic = 20 mV, C = 470 nF
Each 3 dB overdrive
IL > 30 mA, GS = 48 dB
no
yIL 20 mA
GSTA
10
V0
1
w IL 20 mA
w IF 15 mA, mute active
GR
GRM â15
IL> 15 mA, CL = 4.7 nF,
DGRF
f =300 to 3400 Hz
IL = 15 to 100 mA
DGR
Tamb = â10 to +60°C,
DGR
w IL = 15 mA
IL 15 mA, Vgen = 11 Vrms
IL = 73 mA
DGR â5
IL = 73 mA
ni
y IL 20 mA
y IL 20 mA
GRM
V0
0.8
y IL 20 mA
speech mode
w IL 20 mA
VDDS
GSM
60
Typ Max Unit
2.1
2.6
V
3.3
3.6
V
4.5
V
9.7
V
50
75
kâ¦
48
49
dB
â6
â7
dB
2
%
3
4.2 dBm
0.5
ms
9
ms
â 72 dBmp
15
20
dB
VRMS
4
dB
â12 â9
dB
"0.5 dB
"0.5
"0.5
dB
dB
2.2
Vrms
â6
â7
dB
â 80 â 71 dBm
40
dB
0.9
1
Vrms
3
V
V
dB
4 (6)
TELEFUNKEN Semiconductors
Preliminary Information
Rev. A1, 08-Oct-96
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