TSKS5412X01 Datasheet, PDF (4/7 Pages) TEMIC Semiconductors – GaAs Infrared Emitting Diode in Side View Package

TSKS5412X01
Typical Characteristics (T_amb = 25_C unless otherwise specified)
200
150
R_thJA
100
50
0
0
14846
20
40
60
80 100
T_amb – Ambient Temperature ( °C )
Figure 3. Power Dissipation vs. Ambient Temperature
1.5
1.4 ^{IF = 10 mA}
1.3
1.2
1.1
1.0
0.9
0.8
–45 –30 –15 0 15 30 45 60 75 90
14347
T_amb – Ambient Temperature ( °C )
Figure 6. Relative Forward Voltage vs. Ambient Temperature
125
100
100
75
R_thJA
50
25
10
1
m ^{tp / T = 0.001}
tp = 100 s
0.1
0
0
14847
20
40
60
80 100
T_amb – Ambient Temperature ( °C )
Figure 4. Forward Current vs. Ambient Temperature
10⁴
10³
10²
10¹
10⁰
0.01
10⁰
94 7913 e
10¹
10²
10³
10⁴
I_F – Forward Current ( mA )
Figure 7. Radiant Intensity vs. Forward Current
1000
100
10
1
10^–1
0
94 7996 e
1
2
3
4
V_F – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
0.1
10⁰
94 7914 e
10¹
10²
10³
10⁴
I_F – Forward Current ( mA )
Figure 8. Radiant Power vs. Forward Current
4 (7)
Rev. A6, 15-Oct-98