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U2761B Datasheet, PDF (3/11 Pages) TEMIC Semiconductors – DECT RF / IF IC
U2761B
Absolute Maximum Ratings
All voltages are referred to GND (Pins 5, 8 and 22)
Á Supply voltage
Junction temperature
ÁÁÁ Parameters
Pins 10 and 19
ÁSymbol
VS
ÁValue
6
ÁUnit
V
Tj
150
°C
Storage temperature
Tstg
–40 to +125
°C
Thermal Resistance
Junction ambient
Parameters
Symbol
RthJA
Value
130
Unit
K/W
Operating Range
All voltages are referred to GND (Pins 5, 8 and 22)
Supply voltage
ÁÁÁ Parameters
Pins 10 and 19
Ambient temperature
Á Á Symbol Min
VS
2.7
Typ
3.0
ÁMax
5.5
Unit
V
Tamb
–25
+25
+85
°C
Electrical Characteristics
Test conditions: VS = 3.0 V, Tamb = 25°C, unless otherwise specified
Parameters
ÁÁÁ Power supply
Á Total supply current
Á ÁÁ ÁÁ Á Test Conditions / Pins Symbol Min
ÁTyp.
ÁMax
Unit
TX
30
mA
ÁÁ IR mixer
Image-rejection ratio
ÁÁÁÁÁÁÁÁÁ RX
RX (RSSI only)
Standby PU = GND
Pins 6, 7, 17 and 18
Pins 17 and 18
IS
IRR
50
47
1
10
ÁÁmA
mA
mA
20
dB
DSB noise figure
Conversion gain
ÁÁÁÁ Output interception point
ÁÁÁÁÁÁ Input impedance
Á ÁÁ Input matching
Pins 17 and 18
Á ÁÁ W Rload = 200
ÁÁÁÁ Á Pins 17 and 18
Á Pins 6 and 7
NFDSB=
NFSSB
Gconv
OIP3
Zin
Pins 6 and 7 VSWRin
10
12
10
50
<2:1
dB
ÁÁÁdB
dBm
W
LO switch and TX driver
Power gain (high)
ÁÁÁÁÁ Input impedance
ÁÁÁÁ Input matching
ÁÁÁÁ Isolation LO-TX
Pin 9, 20 and 21
@ Pin = 40 dBm
Gp
Á ÁÁ Pin 20 or Pin 21 to GND
Zin
ÁÁÁÁÁÁ Á Pins 20 and 21 VSWRin
ÁÁ ÁÁ RX mode: LO Pin 20 or
Pin 21 to Pin 9
Isol
30
50
<2 1
37
dB
ÁÁW
dB
Output impedance
Maximum output power
ÁÁÁÁÁÁÁÁÁÁ Gain compression
ÁÁÁÁ ÁÁÁÁ ÁÁÁ @ TX RF_OUT
Pin 9
Pin 9
Pin 9
Zout
Pmax
P1dB
100
3
1
W
dBm
ÁÁdBm
Output interception point
Pin 9 OIP3
10
dBm
TEMIC Semiconductor
3 (11)
Rev. A4, 10-Mar-98
Preliminary Information