DG201HS Datasheet, PDF (3/8 Pages) TEMIC Semiconductors – High-Speed Quad SPST CMOS Analog Switch

DG201HS
Specifications^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source On-Resistance
r_DS(on) Match
Switch Off Leakage Current
Channel On Leakage Current
Symbol
V_ANALOG
r_DS(on)
I_S(off)
I_D(off)
I_D(on)
Conditions Unless
Otherwise Specified
V+ = 15 V, V– = –15 V
V_IN = 3 V, 0.8 V^f
I_S = –10 mA, V_D = "8.5 V
V+ = 13.5 V, V– = –13.5 V
V+ = 16.5 V, V– = –16.5 V
V_{D =} "15.5 V
V_S = #15.5 V
V+ = 16.5 V, V– = –16.5 V
V_S = V_D = #15.5 V
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Temp^b Typ^c Min^d Max^d Min^d Max^d Unit
Full
V–
V+ V–
V+
V
Room 25
Full
50
75
50
75
W
Room 3
%
Room 0.1
–1
1
–1
1
Full
–60 60 –20 20
Room 0.1
–1
Full
–60
1
60
–1
–20
1
20
nA
Room 0.1
–1
1
–1
1
Full
–60 60 –20 20
Digital Control
Input, High Voltage
Input, Low Voltage
Input Capacitance
Input Current
V_INH
V_INL
Full
2.4
2.4
V
Full
0.8
0.8
C_in
Full
5
pF
I_INL or
I_INH
V_IN under test = 0.8 V, 3 V
Full
–1
1
–1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t_ON
Room 48
60
Full
75
R_L = 1 kW, C_L = 35 pF
t_OFF1
V_S = "10 V, V_INH = 3 V
Room
30
See Figure 3
Full
50
70
t_OFF2
Room 150
Output Settling Time to 0.1%
t_s
Room 180
Charge Injection
Q
C_L = 1 nF, V_S = 0 V
V_gen = 0 V, R_gen = 0 W
Room –5
OFF Isloation
OIRR
R_L = 1 kW, C_L = 10 pF
f = 100 kHz
Room 85
Crosstalk
(Channel-to-Channel)
Any Other Channel Switches
X_TALK
R_L = 1 kW, C_L = 10 pF
Room 100
f = 100 kHz
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Drain-to-Source Capacitance
C_S(off)
C_D(off)
C_D(on)
C_DS(off)
V_S, V_D = 0 V, f = 1 MHz
Room
8
Room
8
Room 30
Room 0.5
Power Supplies
60
75
50
70
ns
pC
dB
pF
Positive Supply Current
Negative Supply Current
Power Consumption^c
I+
Room 4.5
Full
10
10
I–
V+ = 15 V, V– = –15 V
V_IN = 0 or 5 V
Room 3.5
Full
–6
mA
–6
P_C
Full
240
240 mW
Siliconix
3
E-77071—Rev. E, 01-Sep-97