U429B-FP Datasheet, PDF (2/4 Pages) TEMIC Semiconductors – Driver For IR Transmitter Diodes (Current Sink)

U429B-FP
Absolute Maximum Ratings
Reference point Pin 1
Parameters
Symbol
Value
Unit
Supply voltage
Input voltage
Output voltage
Pins 5 and 8
+V_{S1, S2}
≤ 14
V
Pins 3 and 4
V_I
≤ 14
V
Pins 2, 6 and 7
V_O
≤ 14
V
Collector current
Pin 2
Power dissipation
Junction temperature
T_amb = 80°C
Ambient temperature range
Storage temperature range
I_C
25
mA
P_tot
150
mW
T_j
125
°C
T_amb
–40 to +85
°C
T_stg
–40 to +125
°C
Thermal Resistance
Junction ambient
Parameters
Symbol
R_thJA
Volue
160
Unit
K/W
Electrical Characteristics
V_S1 = V_S2 = 9 V, T_amb = 80°C, reference point Pin 1, unless otherwise specified
Parameters
Test Conditions / Pin Symbol Min. Typ. Max. Unit
Supply voltage range
Battery voltage control
Pin 5
Pin 8
V_S1
2.8
V_S2
2
13.2
V
13.2
V
Switching threshold
Regulated pulse output current
U429B–FP Pin 5
V_S1
6.35
6.7
7.15
V
IR–signal, V₇ = 7 V
Undervoltage indicator
Pin 7
I_O
240
320
400 mA
V₆ = 4 V, @ V_S1 = V_S2 = 4.5 V
IR–signal
Pin 6
I_O
71
100
125 mA
V₇ = 3 V, @ V_S1 = V_S2 = 5 V
Undervoltage indicator
Pin 7
I_O
192
250
328 mA
V₆ = 3 V, @ V_S1 = V_S2 = 4.5 V
Collector saturation voltage
Pin 6
I_O
71
95
118 mA
IR–signal i₇ = 200 mA
Undervoltage indicator
Pin 7
V_O
0.8
V
i₆ = 60 mA, V_S1 = V_S2 = 4.5 V
Switching transistor
Pin 6
V_O
0.8
V
I₂ = 10 mA, V₃ = 4 V
I₂ = 20 mA, V₃ = 7 V
Pin 2
V_O
Pin 2
V_O
100 mV
500 mV
2 (4)
TELEFUNKEN Semiconductors
Rev. A1, 27-Feb-96