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TDA4482-D Datasheet, PDF (2/7 Pages) TEMIC Semiconductors – Quasi-Parallel Sound Processor for TV Sets
TDA4482-D
Pin Configuration
Pin
Function
1–2 Vision-IF-carrier input
3 Intercarrier input 5.74 MHz
4 AGC storage capacitor
5 Intercarrier output 5.74 MHz
6 AF output 1
7–8 FM demod circuit 5.74 MHz
9 Ground
Pin
Function
10–11 FM-demode circuit 5.5 MHz
12 AF output 2
13 Intercarrier output 5.5 MHz
14 Supply voltage
15 Intercarrier input 5.5 MHz
16–17 Sound-IF-carrier input
18 Not conneccted
Circuit Description
This circuit configuration permits high-quality
processing of audio carriers for FM-sound standards,
providing separate inputs for the video and audio carrier.
The audio carrier signal is passed to two multiplying
mixer arrangements via a 3-stage variable wideband
amplifier with led level output signals. One mixer
generates the gain-control signal. The second mixer
operates as an intercarrier demodulator and supplies the
intermediate AF carrier. The video carrier signal required
from the intercarrier is decoupled in a prelimited and se-
lected form from the demodulator tank of the
intermediate video frequency circuit (TDA4453 or
TDA4439) and led to the intercarrier mixer via a limiting
amplifier. Depending on the system, the Nyquist range of
the IF input filter in the video channel affects the
attainable AF signal-to-noise ratio.
The audio PM IF carrier reaches the quadrature demodu-
lators via an inter-connected IF filter and subsequent
limiting amplifier. The resulting AF signals are led via a
low-pass amplifier with increased level to the buffered
output stages. Switching can take place with TTL-
equivalent levels.
Absolute Maximum Ratings
Reference point Pin 9, 18, unless otherwise specified
Parameters
Symbol
Value
Unit
Supply voltage
Pin 14
VS
10 to 13.5
V
Supply current
Pin 14
IS
80
mA
External voltages
Vext
6
V
Pins 1, 2, 3, 4, 5, 7, 8, 10, 11, 12, 13, 15, 16 and 17
Power dissipation (in soldered position)
Junction temperature
Ambient temperature range
Storage temperature range
Ptot
1
W
Tj
125
°C
Tamb
–25 to +70
°C
Tstg
–25 to +125
°C
Thermal Resistance
Junction ambient
Parameters
Symbol
RthJA
Maximum
60
Unit
K/W
2 (7)
TELEFUNKEN Semiconductors
Rev. A1, 29-Aug-96