BPW41N Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPW41N
Basic Characteristics
T_amb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Temp. Coefficient of V_o
Short Circuit Current
Temp. Coefficient of I_k
Reverse Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
Test Conditions
m I_R = 100 A, E = 0
V_R = 10 V, E = 0
V_R = 0 V, f = 1 MHz, E = 0
V_R = 3 V, f = 1 MHz, E = 0
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm,
V_R = 5 V
l V_R=10V, =950nm
W l V_R=10V, R_L=1k , =820nm
W l V_R=10V, R_L=1k , =820nm
Symbol
V_(BR)
I_ro
C_D
C_D
V_o
TK_Vo
I_k
TK_Ik
I_ra
ϕ
l_p
l_0.5
NEP
t_r
t_f
Min
Typ
Max Unit
60
V
2
30 nA
70
pF
25
40
pF
350
mV
–2.6
mV/K
38
mA
0.1
%/K
43
45
mA
±65
950
870...1050
4x10^–14
100
100
deg
nm
nm
W/√ Hz
ns
ns
Typical Characteristics (T_amb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
94 8403
V_R=10V
40
60
80
100
T_amb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
l^VR=5V
=950nm
1.0
0.8
0.6
0
94 8409
20
40
60
80
100
T_amb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
2 (5)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96