 English |
|
|
|
|
|
|
|
| BFR93 Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
| |||
| ◁ |
BFR93/BFR93R
Electrical DC Characteristics
Tj = 25°C, unless otherwise specified
Parameters / Test Conditions
Collector-emitter cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
DC forward current transfer ratio
VCE = 5 V, IC = 30 mA
Symbol Min.
Typ.
Max.
Unit
ICES
100
mA
ICBO
IEBO
100
nA
10
mA
V(BR)CEO
12
V
hFE
25
50
150
Electrical AC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Symbol Min.
Typ.
Max.
Unit
Transition frequency
VCE = 5 V, IC = 30 mA, f = 500 MHz
fT
5
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Cce
0.15
Collector base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.5
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.1
W Noise figure
VCE = 5 V, IC = 4 mA, ZS = 50 , f = 500 MHz
F
1.9
Power gain
VCE = 5 V, IC = 30 mA, ZL = ZLopt,
f = 500 MHz
f = 800 MHz
Gpe
18
Gpe
13
Linear output voltage â two tone intermodulation test
W VCE = 5 V, IC = 30 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
V1 = V2
240
Third order intercept point
VCE = 5 V, IC = 30 mA, f = 800 MHz
IP3
30
GHz
pF
pF
pF
dB
dB
dB
mV
dBm
2 (5)
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese