TSC87251G2D Datasheet, PDF (17/28 Pages) TEMIC Semiconductors – 0.5 Um SCMOS3 Technology

Qualpack TSC87251G2D
Poly non overlaping the Field oxide on Tox/P- and Tox/N-:
The DO is found to be 0.9def/cm2. This result is in agreement with the goal for D0 of 1 def/cm2.
0
-0,01
-0,02
-0,03
-0,04
-0,05
0
DO=0.9 def/cm²
Qbd < 0.1Cb/cm²
CAPA WITH POLY NON OVERLAPING THE FIELD OXIDE
0,02
0,04
0,06
Area in cm²
INC P-
INC N-
Poisson
Intrinsic defects:
The graph here after represents the percentage of failure for a Qbd > 10 Cb/cm² vs the area. The worst
case given by the bigest capacitors shows that 67% of the total distribution has a Qbd > 10 Cb/cm². This
result guarantees a good reliability behaviour. The critical charge, supported by thin oxide and related to
the extrinsic defects, is measured on TOX/P- capacitors of 42570um2 and TOX/N- capacitors of
85140um2. Following are the average results obtained on recent lots from a distribution of about 60 sites
per wafer. The minimum specification limit is 10C/cm2.
Qbd > 10 Cb/cm²
SCMOS3 PROCESS
1
0,9
0,8
0,7
0,6
0,5
0
0,02
0,04
Area in cm²
DEC P-
DEC N-
INC P-
INC N-
0,06
Conclusion:
The QBD results demonstrate high reliability level of SCMOS3 thin oxide.
Rev. 0 – October 1999
17