U3760MB Datasheet, PDF (13/19 Pages) TEMIC Semiconductors – Low-Voltage Standard Telephone Circuit

Absolute Maximum Ratings
Parameters
Line current
DC line voltage
Junction temperature
Ambient temperature
Storage temperature
Total power dissipation, T_amb = 60°C
Junction ambient
SSO44
SDIP40
SSO44
SDIP40
U3760MB
Symbol
Value
Unit
I_L
140
mA
V_L
14
V
T_j
125
°C
T_amb
– 25 to + 75
°C
T_stg
– 55 to + 150
°C
P_tot
0.9
W
1.3
R_thJA
70
k/W
50
Electrical Characteristics Speech Circuit
Reference point Pin GND, f = 1000 Hz, 0 dBm = 775 mV_rms, R_DC = 39 Ω / 1 W, T_amb = 25°C, unless otherwise specified
Parameters
Test Conditions / Pin
Symbol Min.
Line voltage
I_L = 5 mA
I_L = 20 mA
I_L = 30 mA
I_L = 73 mA
V_L
1.2
Transmit and sidetone
Input resistance
R_i
R_i
45
Gain
Line-loss compensation
W ^{IL = 20 mA, S5 = open}
R_AGC = 12 k , I_L = 73 mA
G_s
DG_s
46.8
– 4.8
Noise at line weighted
psophometrically
Sidetone reduction
I_L > 20 mA, G_S = 48dB
yI_L 20 mA
n_o
G_STA
10
DTMF amplifier
Volume range d < 5%
w Single tone, I_L 20 mA
V_L
1.3
DTMF output level low
frequency group
I_L = 20 mA, S5 = closed
V_L
–8
Preemphasis between high- P_PRE = P_HLG – P_LLG,
and low-level frequency S5 = closed
group
P_PRE
1
Receiving amplifier
Gain
Line-loss compensation
w IL 20 mA
I_L = 73 mA
G_R
3
DG_R
– 4.7
Receiving noise at ear-
I_L = 73 mA
n_i
phone weighted psophome-
trially
Gain change when muted
Output voltage push-pull
y I_L 20 mA
y I_L
100
W^{20inmseAri,eZsear}
=
68
nF,
G_RM
V_RECO
24
0.8
y ^{Supply voltage (for internal use only)}
Output voltage
I_L 20 mA dialing mode
V_{DD 1}
2.3
Typ.
4.0
4.5
6.4
80
47.8
–6
15
–6
– 77.5
29
0.9
Max.
1.5
120
48.8
–7
– 72
20
–4
3
5
–7
– 71
34
6.3
Unit
V
V
V
V
kΩ
dB
dB
dBmp
dB
dBm
dBm
dB
dB
dB
dBm
dB
V_RMS
V
Rev. A3, 19-Feb-98
13 (19)