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U2270B Datasheet, PDF (11/13 Pages) TEMIC Semiconductors – Read / Write Base Station IC
U2270B
Electrical Characteristics
Test conditions (unless otherwise specified): VBatt = 12 V, Tamb = –40 to 105_C
Parameters
Test Conditions / Pins
Symbol Min. Typ. Max.
Unit
Data output
– collector emitter
saturation voltage
Iout = 5 mA
Pin 2
VCEsat
400
mV
Data output enable
Pin 3
– low level input voltage
– high level input voltage
Vil
Vih
2.4
0.5
V
V
Data input
Pin 4
– clamping level low
Vil
2
V
– clamping level high
– input resistance
Vih
Rin
3.8
220
kVW
– input sensitivity
f = 3 kHz (squarewave)
10
mV
gain capacitor = 100 nF
pp
Driver polarity mode
Pin 5
– low level input voltage
Vil
– high level input voltage
Vih
Carrier frequency enable
Pin 6
– low level input voltage
Vil
– high level input voltage
Vih
Operating current
Pin10, 11, 12 and 14
IS
5 V application without
load connected to the coil
driver
Standby current
Pin 12
ISt
12 V application
0.2
V
2.4
V
0.8
V
3.0
V
4.5
9
mA
30
70
mA
VS
– Supply voltage
– Supply voltage drift
Pin 14
VS
4.6
5.4
dVs/dT
4.2
– Output current
IS
1.8
3.5
Driver output voltage
IL = ±100 mA
– One rail operation
VS, VEXT, VBatt, DVS = 5 V VDRV
2.9
3.6
– Battery voltage operation VBatt = 12 V Pins 8 and 9 VDRV
3.1
4.0
Vext
Pin 10
– Output voltage
– Supply voltage drift
– Output current
– Standby output current
IC active
standby mode
VEXT
4.6
5.4
dVEXT/dT
4.2
IEXT
3.5
IEXT
0.4
Standby input
Pin 13
– low level input voltage
– high level input voltage
Oscillator
W RF-resistor = 110 k
Vil
Vih
3.1
– Carrier frequency
(application 2), REM 1.
f0
121
125
Low pass filter
– Cut off frequency
Carrier freq. = 125 kHz
fcut
7
Amplifier
– Gain
CHP = 100 nF
30
Schmitt trigger
– Hysteresis voltage
100
6.3
V
mV/K
mA
4.3
VPP
4.7
VPP
6.3
V
mV/K
mA
mA
0.8
V
V
129
kHz
kHz
mV
REM 1.: In application 1. where the oscillator operates in the free running mode, the IC must be soldered free from distortion. Otherwise,
the oscillator frequency may be out of bounds.
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
11 (13)