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| VN2010L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFETs | |||
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Siliconix
VN2010L/BS107
NÄChannel EnhancementÄMode MOS Transistors
Product Summary
Part Number
VN2010L
BS107
V(BR)DSS Min (V)
200
rDS(on) Max (W)
10 @ VGS = 4.5 V
28 @ VGS = 2.8 V
VGS(th) (V)
0.8 to 1.8
0.8 to 3
ID (A)
0.19
0.12
Features
Benefits
D Low OnÄResistance: 6 W
D Secondary Breakdown Free: 220 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Low Offset Voltage
D FullÄVoltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No HighÄTemperature
RunÄAway"
Applications
D HighÄVoltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TOÄ226AA
(TOÄ92)
S
1
G
2
D
3
Top View
VN2010L
TOÄ92Ä18RM
(TOÄ18 Lead Form)
D
1
G
2
S
3
Top View
BS107
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
VN2010L
BS107
Unit
DrainÄSource Voltage
GateÄSource Voltage
Continuous Drain Current (TJ = 150_C)
P u l s e d D r a i n Ca u r r e n t
Power Dissipation
Maximum JunctionÄtoÄAmbient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 1 0_0C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
200
200
"30
"25
0.19
0.12
0.12
0.8
0.8
0.5
0.32
156
250
-55 to 150
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
P-38283âRev. B (08/15/94)
1
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