TSIL6400 Datasheet, PDF (1/5 Pages) TEMIC Semiconductors – GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package

TSIL6400
GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package
Description
TSIL6400 is a high efficiency infrared emitting diode in
GaAlAs on GaAs technology, molded in clear, bluegrey
tinted plastic packages.
In comparison with the standard GaAs on GaAs technol-
ogy these emitters achieve about 70 % radiant power
improvement at a similar wavelength.
The forward voltages at low current and at high pulse cur-
rent roughly correspond to the low values of the standard
technology. Therefore these emitters are ideally suitable
as high performance replacements of standard emitters.
Features
D Extra high radiant power and radiant intensity
D Low forward voltage
D Suitable for high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Angle of half intensity ϕ = ± 17°
D Peak wavelength l_p = 925 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
t_p/T=0.5, t_p=100 ms
t_p=100 ms
xt 5sec, 2 mm from case
94 8390
Symbol
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
TELEFUNKEN Semiconductors
1 (5)
Rev. A1, 18-Oct-96