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SST211-T1 Datasheet, PDF (1/6 Pages) TEMIC Semiconductors – N-Channel Lateral DMOS FETs
SD211DE/SST211 Series
N-Channel Lateral DMOS FETs
Product Summary
Part Number
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
V(BR)DS Min (V)
30
10
20
30
10
20
VGS(th) Max (V)
1.5
1.5
1.5
1.5
1.5
1.5
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
rDS(on) Max (W)
45 @ VGS = 10 V
45 @ VGS = 10 V
45 @ VGS = 10 V
50 @ VGS = 10 V
50 @ VGS = 10 V
50 @ VGS = 10 V
Crss Max (pF)
0.5
0.5
0.5
0.5
0.5
0.5
tON Max (ns)
2
2
2
2
2
2
Features
D Ultra-High Speed Switching—tON: 1 ns
D Ultra-Low Reverse Capacitance: 0.2 pF
D Low Guaranteed rDS @ 5 V
D Low Turn-On Threshold Voltage
D N-Channel Enhancement Mode
Benefits
D High Speed System Performance
D Low Insertion Loss at High Frequencies
D Low Transfer Signal Loss
D Simple Driver Requirement
D Single Supply Operation
Applications
D Fast Analog Switch
D Fast Sample-and-Holds
D Pixel-Rate Switching
D DAC Deglitchers
D High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-
mode MOSFETs designed for high speed low-glitch
switching in audio, video, and high-frequency
applications. The SD211 may be used for "5-V analog
switching or as a high speed driver of the SD214. The
SD214 is normally used for "10-V analog switching.
These MOSFETs utilize lateral construction to achieve
low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection. These
devices feature a poly-silicon gate for manufacturing
reliability.
For similar products see: quad array—SD5000/5400
series and non-Zener protection—SD210DE/214DE.
TO-206AF
(TO-72)
S
1
Body
Substrate
4
(Case)
TOĆ253
(SOTĆ143)
Body Substrate 1
4G
2
D
3
G
Top View
SD211DE, SD213DE, SD215DE
S2
3D
Top View
SST211 (D1)*, SST213 (D3)*, SST215 (D5)*
*Marking Code for TOĆ253
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295.
Applications information may also be obtained via FaxBack, request document #70607.
Siliconix
1
S-51850—Rev. F, 14-Apr-97
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