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| ND2020 Datasheet, PDF (1/4 Pages) TEMIC Semiconductors – N-Channel Depletion-Mode MOSFET Transistors | |||
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ND2012L/2020L
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2012L
ND2020L
V(BR)DSV Min (V)
200
rDS(on) Max (W)
12
20
VGS(off) (V)
â1.5 to â4
â0.5 to â2.5
ID (A)
0.16
0.132
Features
Benefits
D High Breakdown Voltage: 220 V
D Normally âOnâ Low rDS Switch: 9 W
D Low Input and Output Leakage
D Low-Power Drive Requirement
D Low Input Capacitance
D Full-Voltage Operation
D Low Offset Voltage
D Low Error Voltage
D Easily Driven Without Buffer
D High-Speed Switching
Applications
D Normally âOnâ Switching Circuits
D Current Sources/Limiters
D Power Supply, Converter Circuits
D Solid-State Relays
D Telecom Switches
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
ND2012L
ND2020L
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
200
200
"30
"30
0.16
0.132
0.1
0.083
0.8
0.8
0.8
0.8
0.32
0.32
156
156
â55 to 150
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
Siliconix
1
S-52426âRev. C, 14-Apr-97
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