BZT55C Datasheet, PDF (1/6 Pages) TEMIC Semiconductors – Silicon Epitaxial Planar Z-Diodes

TELEFUNKEN Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
Voltage stabilization
BZT55C...
94 9373
Absolute Maximum Ratings
T_j = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R_thJAx300K/W
Type
Symbol
Value
Unit
P_V
500
mW
I_Z
P_V/V_Z
mA
T_j
175
°C
T_stg
–65...+175
°C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mmx50mmx1.6mm
R_thJA
500
K/W
Characteristics
T_j = 25_C
Parameter
Forward voltage
Test Conditions
I_F=200mA
Type Symbol Min
Typ
Max Unit
V_F
1.5
V
Rev. A1: 12.12.1994
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