BF996S Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel dual-gate MOS-FET

BF996S
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Applications
Input and mixer stages in UHF tuner.
Features
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
2
1
Electrostatic sensitive device.
Observe precautions for handling.
D High cross modulation performance
D Low input capacitance
D High AGC-range
3
4
94 9279
BF996S Marking: MH
Plastic case (SOT 143)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/gate 2-source peak current
Total power dissipation
Channel temperature
T_amb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(25 x 20 x 1.5) mm³ plated with 35 mm Cu
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
Symbol
Value
Unit
V_DS
20
V
I_D
30
mA
±I_G1/G2SM
10
mA
P_tot
200
mW
T_Ch
150
°C
T_stg
–65 to +150
°C
Symbol
R_thChA
Value
450
Unit
K/W
1 (5)