1N4148T Datasheet, PDF (1/4 Pages) TEMIC Semiconductors – Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes
1N4148.1N4448
Features
D Electrically equivalent diodes:
1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T_j = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
t_p=1ms
V_R=0
x ^{l=4mm, TL=45°C}
l=4mm, T_L 25°C
Type
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, T_L=constant
Symbol
Value
Unit
V_RRM
V_R
I_FSM
I_FRM
I_F
I_FAV
P_V
P_V
T_j
T_stg
100
V
75
V
2
A
500
mA
300
mA
150
mA
440
mW
500
mW
200
°C
–65...+200
°C
Symbol
R_thJA
Value
350
Unit
K/W
TELEFUNKEN Semiconductors
1 (4)
Rev. A1, 12-Dec-94