UTOUTCPSA2009 Datasheet, PDF (1/6 Pages) Teledyne Technologies Incorporated – Thin-Film Cascadable Amplifier 10 to 2000 MHz

Thin-Film Cascadable Amplifier
10 to 2000 MHz
Technical Data
UTO/UTC/PSA 2009 Series
Features
• Low Distortion:
IP₃ = +40 dBm (Typ)
• Frequency Range: 10 to
2000 MHz
• High Power Output:
+28 dBm (Typ)
• Low Noise Figure:
3.5 dB (Typ)
• Medium Gain: 11.5 dB (Typ)
Applications
• IF/RF Amplification
Description
The 2009 Series is a thin-film
GaAs FET RF amplifier for high
output power and low noise
applications up to 2000 MHz.
Low VSWR is maintained by
resistive feedback and inductive
tuning while the RF is coupled
through the amplifier by
internal blocking capacitors.
The 2009 Series amplifiers are
available in the TO-8, SM-45
hermetic cases or connectored
TC-1A package.
• Output or Driver Stage
• Instrumentation
Pin Configuration
UTO—TO-8T
GROUND
RFIN
RFOUT
V⁺
CASE GROUND
PSA—SM-45
V⁺
RFIN
RFOUT
GND
UTC—TC-1A
~
Schematic
V⁺
RFIN
Maximum Ratings
Parameter
DC Voltage
Continuous RF Input Power
Operating Case Temperature
RFOUT
Storage Temperature
“R” Series Burn-In Temperature
Maximum
+17 Volts
+27 dBm
–55 to +85°C
–62 to +150°C
+85°C
Thermal Characteristics
θ_JC
Active Transistor Power Dissipation
Junction Temperature Above Case Temperature
MTBF (MIL-HDBK-217F, A_UF @ 75°C)
T_CH Max.
39°C/W
2.28 W
89°C
638,175 Hrs.
175°C
Weight: (typical) UTO—2.1 grams; SM-45—1.7 grams; UTC—21.5 grams