UTOUTC2020 Datasheet, PDF (1/6 Pages) Teledyne Technologies Incorporated – Wideband High Efficiency Amplifier 10 to 2000 MHz

Wideband High Efficiency
Amplifier
10 to 2000 MHz
Technical Data
UTO/UTC 2020 Series
Features
• Low Current: 52 mA (Typ)
• +16 dBm (Typ) Output
Power
• Wideband: 10 to 2000 MHz
• High Gain: 19 dB (Typ)
• High Efficiency
Applications
• Low Current Applications
• Portable Communications
• Battery Operated Systems
• Wideband IF/RF
Amplification
• Mixer Post Amp –Broadband
Match
Description
The 2020 series is a two-stage,
medium-gain silicon bipolar
amplifier that incorporates thin-
film technology. Medium noise
figure and high efficiency are a
result of shared bias techniques.
Resistive feedback and active bias
circuits provide a very wideband,
temperature compensated ampli-
fier which has increased immunity
to bias voltage variation. Blocking
capacitors couple the RF through
the amplifier which is optimized
for easy cascading in 50 Ω sys-
tems. The 2020 series amplifiers
are available in either the TO-8
hermetic case or connectored
TC-1A package.
Pin Configuration
UTO—TO-8T
GROUND
RFIN
RFOUT
V+
CASE GROUND
UTC—TC-1A
RF _IN
RFOUT
V+
Schematic
V+
RF_IN
Maximum Ratings
Parameter
Maximum
DC Voltage
Continuous RF Input Power
Operating Case Temperature
RF_{Out Storage Temperature}
“R” Series Burn-In Temperature
+17 Volts
+13 dBm
–55 to +115°C
–62 to +150°C
+115°C
Thermal Characteristics¹
θ_JC
Active Transistor Power Dissipation
105/87°C/W²
100/340 mW²
Junction Temperature Above Case Temperature 11/30°C²
Notes:
1. Values refer to first and second stages, respectively.
Weight: (typical) UTO —2.1 grams; UTC—21.5 grams