UTOUTC2012 Datasheet, PDF (1/5 Pages) –

Thin-Film Cascadable Amplifier
500 to 2000 MHz
Technical Data
UTO/UTC 2012 Series
Features
• Frequency Range: 500 to
2000 MHz
• High Dynamic Range
• Noise Figure: 3.0 dB (Typ)
• GaAs FET Technology
• Temperature Compensated
• Surface Mount Option
Applications
• System Front End
• Surface Mount Assembly
Description
The 2012 Series is a thin-film GaAs
FET RF amplifier using active bias
and resistive feedback for stability
over temperature and bias voltage
variations. Input/output blocking
capacitors couple RF through the
amplifier while a low VSWR is
maintained through inductive
tuning. The 2012 Series amplifiers
are available in three packages:
the surface mount PlanarPak
PP-38 (.375 in. x .375 in.) case, the
TO-8 hermetic case and the
connectorized TC-1A case.
Pin Configuration
UTO—TO-8U
GROUND
RFIN
RFOUT
V+
UTC—TC-1A
CASE GROUND
RF _IN
RFOUT
V+
Schematic
V+
RF_IN
Maximum Ratings
Parameter
DC Voltage
Continuous RF Input Power
Operating Case Temperature
RF_{OUT Storage Temperature}
“R” Series Burn-In Temperature
Thermal Characteristics¹
θ_JC
Active Transistor Power Dissipation
Junction Temperature Above Case Temperature
MTBF (MIL-HDBK-217E, A_UF @ 90°C)
Maximum
+17 Volts
+15 dBm
–55 to +125°C
–62 to +150°C
+125°C
100°C/W
250 mW
25°C
299,200 Hrs.
Weight: (typical) PPA—0.5 grams; UTO—2.1 grams; UTC —21.5 grams