UTOUTC1065 Datasheet, PDF (1/6 Pages) Teledyne Technologies Incorporated – High Efficiency, Class A, 1 Watt Amplifier 10 to 1000 MHz

High Efficiency, Class A,
1 Watt Amplifier
10 to 1000 MHz
Technical Data
UTO/UTC-1065
Features
• 1 Watt Output Power
• Low Current: 470 mA
• 18 Volt Bias
• Guaranteed Performance
-55 to +85°C
• Hermetic TO-3 Package
• SMA Connectored Case
Option
Applications
• UHF/VHF Transmitters
• Communication Circuits
• Mobile Radio
• Bench Top
• Radar Systems
• ECM Systems
Description
The UTO-1065 is a wideband, high
efficiency, Class A, 1 watt ampli-
fier, designed to provide broad-
band power for a wide variety of
applications. The amplifier uses
all silicon bipolar transistors to
provide ultra reliable performance
over the full military temperature
range. Applications include bench
top test sets, transmitter driver
and output stages, and other
applications that require high
intercept points. Inputs and
outputs are matched to 50 Ω for
easy integration into new and
existing systems. Available
packaging for this unit is a her-
metic TO-3 or the connectorized
UCS-1P case.
Pin Configuration
UTO—TO-3
GROUND
(CASE)
V+
GROUND
RFOUT
RFIN
UTC—UCS-1P
RFIN
RFOUT
V+
Schematic
V+
RF_IN
Maximum Ratings
Parameter
Maximum
DC Voltage
Continuous RF Power (CW or Pulse)
RF_{Out Operating Case Temperature Range UTO/UTC}
Storage Temperature
“R” Series Burn-In Temperature (T_C)
20 Volts
+20 dBm
-55 to +85°C
-62 to +150°C
+85°C
Thermal Characteristics¹
θ_JC
Active Transistor Power Dissipation
45°C/W, 45°C/W²
1.1 W, 1.45 W²
Junction Temperature Above Case Temperature 50°C, 65°C²
Notes:
1. Values refer to first, second, and third stage transistors, respectively.
Weight: (typical) UTO — 14.5 grams; UTC — 281 grams