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UTM1057 Datasheet, PDF (1/4 Pages) Teledyne Technologies Incorporated – Thin-Film Cascadable Amplifier 10 to 1000 MHz | |||
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Thin-Film Cascadable Amplifier
10 to 1000 MHz
Technical Data
UTM-1057
Features
⢠Frequency Range: 10 to
1000 MHz
⢠MODAMP Silicon Monolithic
Gain Stages
⢠High Gain: 27.0 dB (Typ)
⢠Low VSWR
Applications
⢠IF/RF Amplification
Description
The UTM-1057 contains three
monolithic microwave integrated
circuits mounted on a thin-film
substrate to provide an RF
amplifier suitable for wideband,
high-gain applications. Internal
blocking capacitors couple the RF
through this three-stage amplifier.
The UTM-1057 is available in the
TO-8 hermetic package.
Pin Configuration
UTMâTO-8T
GROUND
RFIN
RFOUT
V+
CASE GROUND
Schematic
V+
RFIN
Maximum Ratings
Parameter
DC Voltage
Continuous RF Input Power
RFOUT Operating Case Temperature
Storage Temperature
âRâ Series Burn-In Temperature
Maximum
+17 Volts
+20 dBm
â55 to +100°C
â62 to +150°C
+100°C
Thermal Characteristics1
θJC
Active Transistor Power Dissipation
100/90/90°C/W2
175/300/480 mW2
Junction Temperature Above Case Temperature 18/27/43°C2
MTBF (MIL-HDBK-217E, AUF @ 90°C)
161,700 Hrs.
Notes:
1. Values refer to 1st, 2nd, 3rd stage transistors respectively.
Weight: (typical) UTMâ2.1 grams
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