PHT64023B Datasheet, PDF (1/2 Pages) Teledyne Technologies Incorporated – Up to 4 GHz Linear Power Silicon Bipolar Transistor

Up to 4 GHz Linear Power
Silicon Bipolar Transistor
Description
The PHT-64023B is a high performance NPN silicon
bipolar transistor. The PHT-64023B is housed in a
hermetic 230 mil BeO flange package for good
thermal characteristics. This device is designed for
use in medium power, wide band amplifier and
oscillator applications.
706 is not the original device manufacturer.
706 procures commercial off the shelf product
and UpScreens per the following process flow. For
custom screening requirements, Quality Conformance
Inspection, or additional electrical selection, please
contact 706.
PHT-64023B
230 mil BeO Package Dimensions
Technical Data
PHT-64023B Suggested Maximum Ratings
Parameter
Suggested Maximum [1]
Emitter-Base Voltage
2.2V
Collector-Base Voltage
40V
Collector-Emitter Voltage
20V
Collector Current
200mA
Junction Temperature
+200°C
Storage Temperature
-65 to +200°C
NOTE:
1. Permanent damage may occur if any of these limits are exceeded
Teledyne Microwave Solutions • 650-691-9800 • FAX: [phone]
Specifications subject to change without notice.
PHT-64023B