CTS6002 Datasheet, PDF (1/3 Pages) Teledyne Technologies Incorporated – NPN SiGe RF Transistor

NPN SiGe RF Transistor
CTS6002
DESCRIPTION
The CTS6002 is a high gain low noise SiGe RF transistor suitable
for a number of high reliability applications. The CTS6002 is
fabricated in a 70 GHz f_T Silicon-Germanium technology. This
device is available in a 70 mil heremetically sealed package.
FEATURES
• Outstanding NF, F = 0.65 dB @ 1.8GHz
F = 1.2 dB @ 6 GHz
• G_ms = 24dB @ 1.8GHz
• OIP3 = 26.5 dBm @ 1.8GHz
• High Reliability/Space grade screening available
• Available in a hermetically sealed package
MAXIMUM RATINGS
RATING
LIMITS
V_CEO
V_EBO
V_CBO
V_CES
I_C
I_B
P_TOT
T_STG, T_A
T_J
4
1.2
13
13
50
3
200
-65 to +150
+150
UNITS
V
V
V
V
mA
mA
mW
°C
°C
PACKAGE STYLE
70 MIL PACKAGE
DC ELECTRICAL CHARACTERISTICS T_A = 25°C
SYMBOL
TEST CONDITIONS
V_(BR)CEO
I_CES
I_CBO
I_EBO
h_FE
I_C = 1 mA, I_B = 0
V_CE = 13V, V_BE = 0
V_CB = 13V, I_E = 0
V_EB = 0.5V, I_C = 0
I_C = 30 mA, V_CE = 3V, pulse measured
MINIMUM TYPICAL MAXIMUM UNITS
4
4.5
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V
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30
µA
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100
nA
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3
µA
110
180
270
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