TC4423 Datasheet, PDF (3/7 Pages) TelCom Semiconductor, Inc – 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS
1
TC4423
TC4424
TC4425
ELECTRICAL CHARACTERISTICS (Cont.):
Over operating temperature range with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
2
Typ Max Unit
Input
V_IH
V_IL
I_IN
Output
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance, High
R_O
Output Resistance, Low
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
NOTE: 1. Switching times guaranteed by design.
0V ≤ V_IN ≤ V_DD
I_OUT = 10 mA, V_DD = 18V
I_OUT = 10 mA, V_DD = 18V
Duty Cycle ≤ 2%
t ≤ 300 µsec
Figure 1, C_L = 1800 pF
Figure 1, C_L = 1800 pF
Figure 1, C_L = 1800 pF
Figure 1, C_L = 1800 pF
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
2.4
—
—V
—
—
0.8 V
– 10
—
10 µA
V_DD – 0.025 —
—V
3
—
— 0.025 V
—
3.7
8Ω
—
4.3
8Ω
—
3
—A
1.5
—
—A
4
—
28
60 nsec
—
32
60 nsec
—
32
100 nsec
—
38
100 nsec
—
2
3.5 mA
—
0.2
0.3
5
Test Circuit
INPUT
INPUT: 100 kHz,
square wave,
tRISE = tFALL
≤ 10 nsec
VDD = 16V
1 µF
WIMA
MKS-2
0.1 µF CERAMIC
1
OUTPUT
CL = 1800pF
2
TC4423
(1/2 TC4425)
+5V
INPUT
90%
0V
16V
OUTPUT
0V
10%
tD1
tF
90%
10%
tD2
tR
90%
10%
Figure 1. Inverting Driver Switching Time
TELCOM SEMICONDUCTOR, INC.
Test Circuit
INPUT
INPUT: 100 kHz,
square wave,
tRISE = tFALL
≤ 10 nsec
VDD = 16V
1 µF
WIMA
MKS-2
0.1 µF CERAMIC
1
OUTPUT
CL = 1800pF
2
TC4424
(1/2 TC4425)
6
+5V
INPUT
0V
16V
OUTPUT
0V
10%
tD1 ^90%
tR
10%
90%
90%
tD2
tF
10%
Figure 2. Noninverting Driver Switching Time
7
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