TC4404 Datasheet, PDF (3/6 Pages) TelCom Semiconductor, Inc – 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
1
TC4404
TC4405
ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range
with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol Parameter
Test Conditions
Min
Typ Max
2
Unit
Input
V_IH
Logic 1 High Input Voltage
V_IL
Logic 0 Low Input Voltage
I_IN
Input Current
– 0V ≤ V_IN ≤ V_DD
Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance
I_OUT = 10 mA, V_DD = 18V; Any Drain
I_PK
Peak Output Current (Any Drain) Duty cycle <2%, t ≤ 300µsec
I_DC
Continuous Output Current (Any Drain)
I_R
Latch-Up Protection (Any Drain) Duty cycle <2%, t ≤ 300µsec
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Figure 1, C_L = 1000 pF
Figure 1, C_L = 1000 pF
Figure 1, C_L = 1000 pF
Figure 1, C_L = 1000 pF
Power Supply
I_S
Power Supply Current
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
NOTE 1. Switching times guaranteed by design.
2.4
—
—
V
—
—
0.8
V
– 10
—
10
µA
V_DD – 0.025 —
—
V
3
—
—
0.025
V
—
9
12
Ω
—
1.5
—
A
—
—
100
mA
>500
—
—
mA
—
—
40
4 _nsec
—
—
40
nsec
—
—
40
nsec
—
—
60
nsec
—
—
8
mA
—
—
0.6
5
Circuit Layout Guidelines
Avoid long power supply and ground traces (added
inductance causes unwanted voltage transients). Use power
and ground planes wherever possible. In addition, it is
advisable that low ESR bypass capacitors (4.7µF or 10µF
PIN CONFIGURATIONS (DIP AND SOIC)
tantalum) be placed as close to the driver as possible. The
driver should be physically located as close to the device it
is driving as possible to minimize the length of the output
trace.
6
VDD ₁
IN A 2
IN B 3
COM 4
TC4404
8 A TOP
7 A BOTTOM
6 B TOP
5 B BOTTOM
VDD ₁
IN A 2
IN B 3
COM 4
TC4404
8 A TOP
7 A BOTTOM
6 B TOP
5 B BOTTOM
7
VDD ₁
IN A 2
IN B 3
COM 4
TC4405
8 A TOP
7 A BOTTOM
6 B TOP
5 B BOTTOM
VDD ₁
IN A 2
IN B 3
COM 4
TELCOM SEMICONDUCTOR, INC.
TC4405
8 A TOP
7 A BOTTOM
6 B TOP
5 B BOTTOM
8
4-221