TC426 Datasheet, PDF (2/5 Pages) TelCom Semiconductor, Inc – 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC426
TC427
TC428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal .... V_DD + 0.3V to GND – 0.3V
Power Dissipation (T_A ≤ 70°C)
Plastic ...............................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................470mW
Derating Factor
Plastic ............................................................. 8mW/°C
CerDIP ......................................................... 6.4mW/°C
SOIC ............................................................... 4mW/°C
Operating Temperature Range
C Version ................................................. 0°C to +70°C
I Version .............................................. – 25°C to +85°C
E Version ............................................ – 40°C to +85°C
M Version .......................................... – 55°C to +125°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ELECTRICAL CHARACTERISTICS: T_A = +25°C with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V_IH
Logic 1, High Input Voltage
V_IL
Logic 0, Low Input Voltage
I_IN
Input Current
Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_OH
High Output Resistance
R_OL
Low Output Resistance
I_PK
Peak Output Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
0V ≤ V_IN ≤ V_DD
I_OUT = 10 mA, V_DD = 18V
I_OUT = 10 mA, V_DD = 18V
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
2.4
—
—
—
–1
—
V_DD – 0.025
—
—
—
—
10
—
6
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
1
—
0.025
15
10
—
30
30
50
75
8
0.4
V
V
µA
V
V
Ω
Ω
A
nsec
nsec
nsec
nsec
mA
mA
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Input
V_IH
V_IL
I_IN
Output
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
0V ≤ V_IN ≤ V_DD
2.4
—
—
V
—
—
0.8
V
–10
—
10
µA
V_OH
High Output Voltage
V_DD – 0.025
—
—
V
V_OL
Low Output Voltage
—
—
0.025
V
R_OH
High Output Resistance
I_OUT = 10 mA, V_DD = 18V
—
13
20
Ω
R_OL
Low Output Resistance
I_OUT = 10 mA, V_DD = 18V
—
8
15
Ω
Switching Time (Note 1)
t_R
t_F
t_D1
t_D2
Power Supply
Rise Time
Fall Time
Delay Time
Delay Time
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
—
—
60
nsec
—
—
30
nsec
—
—
75
nsec
—
—
120
nsec
I_S
Power Supply Current
NOTE: 1. Switching times guaranteed by design.
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
—
—
12
mA
—
—
0.6
mA
4-170
TELCOM SEMICONDUCTOR, INC.