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TC1413 Datasheet, PDF (2/5 Pages) TelCom Semiconductor, Inc – 3A HIGH-SPEED MOSFET DRIVERS
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3A HIGH-SPEED MOSFET DRIVERS
TC1413
TC1413N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA ≤ 70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless other-
wise specified. Typical values are measured at TA = 25°C; VDD =16V.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
VIH
Logic 1 High Input Voltage
2.0
—
VIL
IIN
Output
Logic 0 Low Input Voltage
—
—
Input Current
– 5V ≤ VIN ≤ VDD
TA = 25°C
–1
—
– 40°C ≤ TA ≤ 85°C – 10
—
VOH
High Output Voltage
DC Test
VDD – 0.025 —
VOL
Low Output Voltage
DC Test
—
—
RO
Output Resistance
VDD = 16V, IO = 10 mA TA = 25°C
—
2.7
0°C ≤ TA ≤ 70°C
—
3.3
– 40°C ≤ TA ≤ 85°C
—
3.3
IPK
Peak Output Current
VDD = 16V
—
3.0
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µsec
VDD = 16V
0.5
—
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
Figure 1
Figure 1
Figure 1
Figure 1
TA = 25°C
—
20
0°C ≤ TA ≤ 70°C
—
22
– 40°C ≤ TA ≤ 85°C —
24
TA = 25°C
—
20
0°C ≤ TA ≤ 70°C
—
22
– 40°C ≤ TA ≤ 85°C
—
24
TA = 25°C
—
35
0°C ≤ TA ≤ 70°C
—
40
– 40°C ≤ TA ≤ 85°C —
40
TA = 25°C
—
35
0°C ≤ TA ≤ 70°C
—
40
– 40°C ≤ TA ≤ 85°C
—
40
IS
Power Supply Current
VIN = 3V
VIN = 0V
VDD = 16V
—
0.5
—
0.1
NOTE: 1. Switching times are guaranteed by design.
—
V
0.8
V
1
µA
10
—
V
0.025 V
4
Ω
5
5
—
A
—
A
28
nsec
33
33
28
nsec
33
33
45
nsec
50
50
45
nsec
50
50
1.0
mA
0.15
4-202
TELCOM SEMICONDUCTOR, INC.
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