English
Language : 

TC1410 Datasheet, PDF (2/5 Pages) TelCom Semiconductor, Inc – 0.5A HIGH-SPEED MOSFET DRIVERS
◁
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA ≤ 70°C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless other-
wise specified. Typical values are measured at TA=25°C; VDD =16V.
Symbol Parameter
Test Conditions
Min
Typ Max Unit
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
– 5V ≤ VIN ≤ VDD
– 40°C ≤ TA ≤ 85°C
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD = 16V, IO = 10mA
IPK
Peak Output Current
IREV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
VDD = 16V
Duty Cycle ≤ 2%
t ≤ 300 µsec
Figure 1
tF
Fall Time
Figure 1
tD1
Delay Time
Figure 1
tD2
Delay Time
Figure 1
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
NOTE: 1. Switching times are guaranteed by design.
TA = 25°C
VDD – 0.025
TA=25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
VDD = 16V
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
VDD = 16V
2.0
—
–1
– 10
—
—
—
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
—
0.8
V
—
1
µA
—
10
—
V
—
0.025
V
16
22
Ω
20
28
20
28
0.5
—
A
—
—
A
25
35
nsec
27
40
29
40
25
35
nsec
27
40
29
40
30
40
nsec
33
45
35
45
30
40
nsec
33
45
35
45
0.5
1.0
mA
0.1
0.15
4-184
TELCOM SEMICONDUCTOR, INC.
 ▷