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TC4403 Datasheet, PDF (1/5 Pages) TelCom Semiconductor, Inc – 1.5A HIGH-SPEED, FLOATING LOAD DRIVER
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TC4403
1.5A HIGH-SPEED, FLOATING LOAD DRIVER
FEATURES
GENERAL DESCRIPTION
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s Low Quiescent Current ......................... 300µA Max
s Capacitive Inputs With 300mV Hysteresis
s Both Inputs Must Be Driven to Drive Load
s Low Output Leakage
s High Peak Current Capability
s Fast Output Rise Time
s Outputs Individually Testable
APPLICATIONS
s Isolated Load Drivers
s Pulsers
s Safety Interlocks
ORDERING INFORMATION
Part No.
TC4403CPA
TC4403EPA
TC4403MJA
Package
8-Pin PDIP
8-Pin PDIP
8-Pin CerDIP
PIN CONFIGURATION
Temperature
Range
0°C to 70°C
– 40°C to +85°C
– 55°C to +125°C
NC 1
IN (VDD) 2
GND 3
IN (GND) 4
TC4403
8 NC
7 OUT (VDD)
6 VDD
5 OUT (GND)
The TC4403 is a modified version of the TC4425 driver,
intended to drive floating or isolated loads requiring high-
current pulses. The load is intended to be connected be-
tween the outputs without other reference to supply or
ground. Then, only when both logic inputs and the VDD input
3 are energized, is power supplied to the load. This construc-
tion allows the implementation of a wide variety of redundant
input controllers.
The low OFF-state output leakage and independence of
the two half-circuits permit a wide variety of testing schemes
to be utilized to assure functionality. The high peak current
capability, short internal delays, and fast output rise and fall
times ensure that sufficient power will be available to the
4 load when it is needed. The TTL and CMOS compatible
inputs allow operation from a wide variety of input devices.
The ability to swing the inputs negative without affecting
device performance allows negative biases to be placed on
the inputs for greater safety. In addition, the capacitive
nature of the inputs allows the use of series resistors on the
inputs for extra noise suppression.
The TC4403 is built for outstanding ruggedness and
5 reliability in harsh applications. Input voltage excursions
above the supply voltage or below ground are clamped
internally without damaging the device. The output stages
are power MOSFETs with high-speed body diodes to pre-
vent damage to the driver from inductive kickbacks.
(TOP VIEW)
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FUNCTIONAL BLOCK DIAGRAM
6
VDD
4
IN (GND)
IN (VDD) 2
GND
3
EFFECTIVE INPUT
C = 20pF
(EACH INPUT)
TELCOM SEMICONDUCTOR, INC.
300mV INPUT
HYSTERESIS
TC4403
7 OUT (VDD)
5 OUT (GND)
7
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TC4403-6 10/11/96
4-213