TIP42A Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
TIP42A/42B/42C TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
2 W (Tamb=25℃)
Collector current
I_CM:
-6 A
Collector-base voltage
V_(BR)CBO: TIP42A : -60 V
TIP42B: -80 V
TIP42C: -100 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
42A
42B
42C
42A
42B
42C
42A
42B
42C
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
42A
42B
42C
ICEO
Test conditions
Ic= -1mA, IE=0
Ic= -30mA, IB=0
IE= -1mA,IC=0
VCB=- 60V, IE=0
VCB=- 80V, IE=0
VCB=-100V, IE=0
VCE= -30V, IB= 0
VCE= -30V, IB= 0
VCE= -60V, IB= 0
MIN
-60
-80
-100
-60
-80
-100
-5
MAX
-0.4
-0.7
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
IEBO
VEB=-5 V, IC=0
-1
hFE(1)
VCE= -4V, IC= -0.3A
30
hFE(2)
VCE=- 4V, IC= -3A
15
75
VCE(sat)
IC=-6A, IB=-0.6A
-1.5
VBE(on
VCE= -4V, IC=-6A
-2
fT
VCE=-10V , IC=-0.5A
3
f =1MHz
UNIT
V
V
V
mA
mA
mA
V
V
MHZ