TIP31 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W)

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
TIP31/31A/31B/31C TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
2 W (Tamb=25℃)
Collector current
I_CM:
3A
Collector-base voltage
V_(BR)CBO:
TIP31: 40 V
TIP31A: 60 V
TIP31B: 80 V
TIP31C: 100 V
Operating and storage junction temperature range
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
MAX
31
40
Collector-base breakdown voltage
31A
60
31B
V(BR)CBO
Ic= 100 µA, IE=0
80
31C
100
31
40
Collector-emitter breakdown voltage
31A
60
V(BR)CEO
31B
Ic= 30 mA, IB=0
80
31C
100
Emitter-base breakdown voltage
Collector cut-off current
31
31A
31B
31C
V(BR)EBO
ICBO
IE= 100µA, IC=0
VCB= 40V, IE=0
VCB= 60V, IE=0
VCB= 80V, IE=0
VCB= 100V, IE=0
5
0.2
Collector cut-off curremt
31/31A
ICEO
VCE= 30V , IB= 0
0.3
31B/31C
VCE= 60V , IB= 0
0.3
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
IEBO
hFE(1)
VEB=5V, IC=0
VCE= 4V, IC= 3A
1
10
50
hFE(2)
VCE= 4V, IC= 1A
25
VCE(sat)
IC=3A, IB=375mA
1.2
VBE(on)
VCE= 4V, IC=3A
1.8
fT
VCE=10V , IC=500mA
3
UNIT
V
V
V
mA
mA
mA
V
V
MHZ