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TIP2955F Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – POWER TRANSISTORS
Transys
Electronics
LIMITED
POWER TRANSISTORS
TIP2955F PNP
TIP3055F NPN
TO- 3P Fully Isolated
Plastic Package
B
C
E
Designed for General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Power Dissipation upto Tc=25º C
Derate above 25º C
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCER
VCB
VEB
IC
IB
PD
Tj, Tstg
VALUE
60
70
100
7.0
15
7.0
90
0.72
- 65 to +150
UNIT
V
V
V
V
A
A
W
W/ ºC
ºC
THERMAL RESISTANCE
From Junction to case
Rth (jc)
1.39
ºC/W
From Junction to Ambient
Rth (ja)
35.7
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
VCEO(sus) *
ICER
ICEO
ICEV
IC = 30 mA, IB = 0
VCE=70V, RBE=100Ω
VCE = 30 V, IB =0
VCE=100V, VBE(off) =1.5 V
Emitter Cutoff Current
IEBO
VBE = 7.0 V, IC = 0
DC Current Gain
Collector-Emitter Saturation Voltage
hFE *
VCE(sat) *
IC = 4.0 A, VCE = 4.0 V
IC = 10 A, VCE = 4.0 V
IC = 4.0 A, IB = 400 mA
IC = 10 A, IB = 3.3 A
Base-Emitter On Voltage
VBE(on) *
IC = 4.0 A, VCE = 4.0 V
MIN TYP MAX UNIT
60
V
1.0 mA
0.7 mA
5.0 mA
5.0 mA
20
70
5.0
1.1
V
3.0
1.8
V
Second Breakdown
Second Breakdown Collector Current
IS / b
VCE = 30 V, t = 1.0s,
3.0
A
with Base Forward Biased
Nonrepetitive