TIP122F Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

Transys
Electronics
LIMITED
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
TIP122F NPN
TIP127F PNP
TO-220FP
B _CE
Designed for General-Purpose Amplifier and Low-Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current -Continuous
IC
Collector Current (Peak)
ICM
Base Current
IB
Total Power Dissipation @ Tc=25 deg C
PD
Derate Above 25 deg C
Total Power Dissipation @ Ta=25 deg C
PD
Derate Above 25 deg C
Unclamped Inductive Load Energy (1)
E
Junction Temperature
Tj
Storage Temperature Range
Tstg
THERMAL RESISTANCE
From Junction to Ambient
Rth(j-a)
From Junction to Case
Rth(j-c)
(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter (sus) Voltage
VCEO (sus) * IC=100mA, IB=0
Collector Cut off Current
ICBO
VCB=100V, IE=0
ICEO
IB=O, VCE=50V
Emitter Cut off Current
IEBO
VEB=5V,IC=0
Collector Emitter Saturation Voltage
VCE(Sat)* IC=3A, IB=12mA
IC=5A, IB=20mA
Base Emitter on Voltage
VBE(on) * IC=3A, VCE=3V
DC Current Gain
hFE*
IC=0.5A, VCE=3V
IC=3A, VCE=3V
VALUE
100
100
5.0
5.0
8.0
120
65
0.52
2.0
0.016
50
150
-65 to +150
62.5
1.92
UNIT
V
V
V
A
A
mA
W
W/deg C
W
W/deg C
mj
deg C
deg C
deg C/W
deg C/W
MIN MAX
100
-
-
0.2
-
0.5
-
2.0
-
2.0
-
4.0
-
2.5
1.0
-
1.0
-
UNIT
V
mA
mA
mA
V
V
V
K
K