RB717F Datasheet, PDF (1/1 Pages) Rohm – Schottky barrier diode

RB717F SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_F:
30 mA
Collector-base voltage
V_R:
40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
CIRCUIT:
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
1
3
2
MARKING: 3E
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=10V
MIN
MAX
40
1
Forward voltage
VF
IF=1mA
0.37
Diode capacitance
CD
VR=1V, f=1MHz
5
UNIT
V
µA
V
pF