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| RB715W Datasheet, PDF (1/1 Pages) Rohm – Schottky barrier diode | |||
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RB715W SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation
PD:
200 mW (Tamb=25â)
Collector current
IF:
30 mA
Collector-base voltage
VR:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
CIRCUIT:
SOT-523
1
3
2
MARKING: 3D
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test conditions
IR= 100µA
VR=10V
IF=1mA
VR=1V, f=1MHz
MIN
MAX
UNIT
40
V
1
µA
0.37
V
2
pF
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