|
RB706F-40 Datasheet, PDF (1/1 Pages) Rohm – Schottky barrier diode | |||
|
RB706F-40 SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25â)
Collector current
IF:
30 mA
Collector-base voltage
VR:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
CIRCUIT:
SOT-323
1. 25¡ Ã0. 05
2. 30¡ Ã0. 05
Unit: mm
1
3
2
MARKING: 3J
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=10V
MIN
MAX
40
1
Forward voltage
Diode capacitance
VF
IF=1mA
CD
VR=1V, f=1MHz
0.37
5
UNIT
V
µA
V
pF
|