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RB501V-40 Datasheet, PDF (1/1 Pages) Rohm – Schottky barrier diode
RB501V-40 Schottky Diodes
FEATURES
z High current rectifier Schottky diode
z Low voltage, low inductance
z For power supply
MAKING: 4
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limits
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current
IO
Peak forward surge current
IFSM
Junction temperature
Tj
Storage temperature
Tstg
45
40
0.1
1
125
-55~+125
Unit
V
V
A
A
℃
℃
Electrical Ratings @TA=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
CT
Min. Typ. Max. Unit
0.55
V
0.34
30 µA
6
pF
Conditions
IF=100mA
IF=10mA
VR=10V
VR=10V, f=1MHZ