MMSTA92 Datasheet, PDF (1/1 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
MMSTA92 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
0.2
W (Tamb=25℃)
Collector current
I_CM:
-0.3
A
Collector-base voltage
V_(BR)CBO: -310
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
Ic= -100µA, IE=0
-310
V(BR)CEO
Ic= -1 mA, IB=0
-305
V(BR)EBO
IE= -100µA, IC=0
-5
ICBO
VCB= -200V, IE=0
IEBO
VEB= -5V, IC=0
hFE(1)
VCE= -10V, IC=- 1 mA
60
hFE(2)
VCE= -10V, IC = -10 mA 100
hFE(3)
VCE= -10 V, IC= -80 mA 60
VCE(sat) IC= -20 mA, IB= -2 mA
VBE(sat) IC= -20 mA, IB= -2 mA
VCE= -20 V, IC= -10 mA
fT
50
f = 30MHz
V
V
V
-0.25
µA
-0.1
µA
200
-0.2
V
-0.9
V
MHz
DEVICE MARKING
MMSTA92=K3R