MMST5551 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
MMST5551 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.2 A
Collector-base voltage
V_(BR)CBO:
160 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VEB=3V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=-10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN
180
160
5
80
80
30
100
Noise figure
NF
VCE=5V, Ic=0.2mA,
f=1KHZ, Rg=10Ω
TYP MAX UNIT
V
V
V
50 nA
50 nA
250
0.15 V
0.2 V
1
V
1
V
300 MHz
6
pF
8
dB
Marking
K4N