MMBD4448W Datasheet, PDF (1/1 Pages) Won-Top Electronics – SURFACE MOUNT FAST SWITCHING DIODE

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
MMBD4448W SWITCHING DIODE
FEATURES
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_O:
250 mA
Collector-base voltage
V_R:
75
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
Marking: KA3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR) R
IR
VF
CD
t rr
Test conditions
IR= 10µA
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
Irr=0.1×IR ,RL=100Ω
MIN
75
MAX
0.025
2.5
0.72
0.855
1
1.25
4
4
Test period <3000µs.
UNIT
V
µA
V
pF
nS