MJE3055 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
MJE3055 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
2 W (Tamb=25℃)
Collector current
I_CM:
10 A
Collector-base voltage
V_(BR)CBO:
70 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Test conditions
Ic=1mA, IE=0
Ic=200mA, IB=0
IE=1mA, IC=0
VCB=70V, IE=0
VCE=30V, IE=0
VEB=5V, IC=0
VCE=4V, IC=4A
VCE=4V, IC=10A
IC=4A, IB=400mA
IC=10A, IB=3.3A
VCE=4V, IC=4A
VCE=10V, IC=500mA
MIN TYP MAX UNIT
70
V
60
V
5
V
1
mA
0.7 mA
5
mA
20
100
5
1.1 V
8
V
1.8 V
2
MHz