MCR716 Datasheet, PDF (1/1 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)

MCR716, MCR718 SERIES
Silicon Controlled Rectifier
V_RRM = 400- 600V, I_F(RMS) = 4.0A
G
K
Case D-PAK Plastic
A
Symbol
MAXIMUM RATINGS (Tj = 25 ^OC unless stated otherwise)
Parameter
Repetitive Peak Off-State Voltage
Symbol
MCR716
MCR718
V_RRM
400
600
On-State RMS Current
I_T(RMS)
4.0 at tc = 90^OC
Peak Non-Repetitive Surge Current
I_TSM
25
I ²T for Fusing 8.3ms
I²T
2.6
Peak Reverse Gate Voltage
Peak Gate Current
V_GRM
18
I_GM
0.2
Forward Average Gate Power
PG(AV)
0.1
Forward Peak Gate Power
Maximum Storage Temperature Range
PGM
T(STG)
0.5
-40 to +150
Maximum Junction Temperature Range
Tj
-40 to +110
Unit
Volt
Amp
Amp
A²/S
Volt
Amp
Watt
Watt
O_C
O_C
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Condition
Symbol
Min
Peak Forward On-State Voltage
Repetitive Peak Reverse Current
Gate Trigger Voltage
Gate Trigger Current
Latch Current
Holding Current
Thermal Resistance (Junction to Case)
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Current
V_TM
I_RRM
V_GT
I_GT
I_L
I_H
RTH (J-c)
dV/dt
dA/dt
ITM = 8.2 Amps
VR = VRRM. tJ=110^OC
0.30
1.0
0.4
5.0
Value
Typ
1.5
0.55
25
1.0
10
Max ^Unit
2.2 _Volt
200 ^µA
0.80 Volt
75
µA
5.0 mA
5.0 mA
3.0 ^OC/W
V/µS
100 A/µS
Mechanical
Dimensions
DIMENSIONS
Millimetres
Inches
Dim Min Max Min Max
a
6.35 6.73 0.250 0.265
f
a
c
g
h
b 2.60 2.89 0.102 0.114
4
c 0.77 1.27 0..030 0.050
d 5.97 6.35 0.235 0.25
1 - Cathode
e 0.51 1.27 0.020 0.050
2 & 4 - Anode
b
d
f
2.19 2.38 0.086 0.094
3 - Gate
1 23
g
0.84 1.01 0.033 0.040
j
h 3.51
0.138
j
0.51
0.020
k 0.46 0.580 0.018 0.023
m 2.29 Pitch
0.09 Pitch
n 0.94 1.19 0.037 0.047
p 0.69 0.88 0.027 0.035
me
n
k
p
Case D-PAK Plastic