MCR100 Datasheet, PDF (1/1 Pages) Motorola, Inc – Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)

MCR100 SERIES
Silicon Controlled Rectifier
V_RRM = 100-600V, I_F(RMS) = 0.8A
G
K
A
Symbol
MAXIMUM RATINGS (Tj = 25 ^OC unless stated otherwise)
Parameter
Repetitive Peak Off-State Voltage
Symbol
MCR100-3 MCR100-4
MCR100-6
V_RRM
100
200
400
On-State RMS Current
I_T(RMS)
0.8 at tc = 85^OC
Peak Non-Repetitive Surge Current
I_TSM
10
I ²T for Fusing 8.3ms
I²T
0.415
Peak Reverse Gate Voltage
V_GRM
5
Peak Gate Current
I_GM
0.1
Forward Average Gate Power
PG(AV)
0.1
Forward Peak Gate Power
Maximum Storage Temperature Range
PGM
T(STG)
1.0
-40 to +150
Maximum Junction Temperature Range
Tj
-40 to +110
MCR100-8
600
Unit
Volt
Amp
Amp
A²/S
Volt
Amp
Watt
Watt
O_C
O_C
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Condition
Symbol
Min
Peak Forward On-State Voltage
V_TM
ITM = 1.0 Amps
Repetitive Peak Reverse Current
I_RRM
VR = VRRM. tJ=110^OC
Gate Trigger Voltage
V_GT
Gate Trigger Current
I_GT
Latch Current
I_L
Holding Current
I_H
Thermal Resistance (Junction to Case)
RTH (J-c)
Rate of Rise of Off-State Voltage
dV/dt
20
Rate of Rise of Off-State Current
dA/dt
Value
Typ
0.62
40
0.60
0.50
35
Max ^Unit
1.7 Volt
100
0.80 Volt
200 ^µA
10.0 mA
5.0 mA
75
O_C/W
V/µS
50
A/µS
Mechanical Outline
0.205(5.20) max
0.175 (4.45) min
0.165(4.19) max
0.125(3.18) min
1
2
3
Cathode Gate Anode
Case:TO - 92
123
0.210(5.33) max
0.170 (4.32) min
0.500(12.70) min
0.055(1.39) max
0.045 (1.15) min
0.055(1.39) max
0.045 (1.15) min
0.021(50.533) max
0.016 (0.407) min
0.135(3.43) min
All Dimensions in Inches (Millimeters)
Third Angle Projection
0.105(2.66) max
0.080(2.04) min