MCR100-6 Datasheet, PDF (1/2 Pages) Semtech Corporation – SCR

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
MCR 100- 6, - 8 Silicon Planar PNPN Thyristor
FEATURES
TO-92
1. KATHODE
2. GATE
Current-I_GT:
200
µA
I_TRMS:
V_DRM:
0.8
MCR100-6:
MCR100-8:
A
400 V
600 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
3. ANODE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
On state voltage *
VTM
ITM=1A
1.7
V
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCR100-6
MCR100-8
Peak forward or reverse blocking
Current
Holding current
VGT
VDRM
AND
VRRM
IDRM
IRRM
IH
VAK=7V
0.8
V
IDRM= 10 µA ,VMAX=1010 V
400
V
600
VAK= Rated
VDRM or VRRM
IHL= 20 mA , Av = 7 V
10
µA
5
mA
A2
5
15
µA
Gate trigger current
A1
IGT
A
VAK=7V
15
30
µA
30
80
µA
B
80
200
µA
* Forward current applied for 1 ms maximum duration, duty cycle≤1%.