IRFZ24NS Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

IRFZ24NS/NL
Power MOSFET
V_{DSS =} 55V, R_DS(on) = 0.07 mohm, I_D = 17 A
D
N Channel
G
S
Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Value
Min Typ
Drain to Source Breakdown Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA
55
-
Drain to Source Leakage Current
IDSS ^{VDS = 55VDC, VGS = 0VDC}
VDS = 44VDC, VGS = 0VDC Tj=150 C
-
-
-
-
Gate to Source Leakage Current
IGSS ^{VGS = +20VDC}
VGS = -20VDC
--
--
Gate Threshold Voltage
VGS(th) V_DS = V_GS, ID = 250µA
2.0
-
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 10A
--
Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn On Delay Time
Turn Off Delay Time
Rise Time
Fall Time
Continuous Source Current
Pulsed Source Current
Forward Voltage (Diode)
Single Pulse Avalanche Energy
Repetive Avalanche Energy
Avalanche Current
QG
QGS
QGD
ID = 25A
VDS = 44VDC,
VGS = 10VDC
CISS
COSS VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ
CRSS
td(on)
td(off)
tr
VDD = 28VDC, ID = 25A, RG = 12
tf
IS
ISM
VSD VGS = 0VDC, IS =10A, Tp = 300µS
EAS
EAR
IAR
--
--
--
- 370
-
140
-
65
-
4.9
-
19
-
34
-
27
--
--
--
Max ^Unit
- Volt
25
250 µA
100 nA
-100 nA
4.0 Volt
0.07
20 nC
5.3 nC
7.6 nC
- pF
- ^pF
- pF
- nS
- ^nS
- nS
- nS
17 A
68
A
1.3 V
71 mj
4.5 mj
10 A
MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)
Parameter
Symbol Condition
Gate to Source Voltage
VGS
Drain to Source
VDSS
Voltage
Continuous Drain Current
ID
Pulsed Drain Current
Total Power Dissapation
Thermal Resistance
(Junction to Ambient)
IDM
PD (TA = 25 C)
RTH (J-A)
Value
+/- 20V
55
17
68
45
40
Maximum Operating Temperature Range (Tj) -55 to +175 C
Maximum Storage Temperature Range (Tstg) -55 to +175 C
Unit
Volt
Volt
Amp
Amp
W
C/W
Page 1 of 2